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Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor.

Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor.

Authors :
Fuh, Chur-Shyang
Liu, Po-Tsun
Huang, Wei-Hsun
Sze, Simon M.
Source :
IEEE Electron Device Letters; Nov2014, Vol. 35 Issue 11, p1103-1105, 3p
Publication Year :
2014

Abstract

This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm \(^{{\mathbf {2}}}\) /Vs, threshold voltage (V \(_{\rm th}\) ) of −2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 °C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to \(2.16\!\times \! 10^{{\mathbf {17}}}\) cm \(^{\mathbf {-3}}\) eV \(^{{\mathbf {-1}}}\) and \(4.38\times 10^{\mathbf {12}}\) cm \(^{\mathbf {-2}}\) eV \(^{\mathbf {-1}}\) , respectively. The positive bias stability of 400 °C annealed a-IZTO TFTs is also effectively improved with a V \(_{\rm th}\) shift of 0.92 V. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
35
Issue :
11
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
99059102
Full Text :
https://doi.org/10.1109/LED.2014.2354598