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Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter...

Authors :
Llinares, P.
Celi, D.
Roux-dit-Buisson, O.
Ghibaudo, G.
Chroboczek, J. A.
Source :
Journal of Applied Physics; 9/1/1997, Vol. 82 Issue 5, p2671, 5p, 2 Diagrams, 1 Chart, 4 Graphs
Publication Year :
1997

Abstract

Studies low frequency noise in quasiself-aligned bipolar n-p-n junction transistors with varying emitter/base junction dimensions. Power spectral density; Localization of the low frequency noise sources; Application of current-to-voltage converters.

Subjects

Subjects :
JUNCTION transistors

Details

Language :
English
ISSN :
00218979
Volume :
82
Issue :
5
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
98983
Full Text :
https://doi.org/10.1063/1.366082