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Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer.
- Source :
- Applied Physics Letters; 10/6/2014, Vol. 105 Issue 14, p1-4, 4p, 2 Color Photographs, 3 Black and White Photographs, 1 Chart, 1 Graph
- Publication Year :
- 2014
-
Abstract
- Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiOamorphous-YIG bilayer is formed and welds the garnet to silicon. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 105
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 98887474
- Full Text :
- https://doi.org/10.1063/1.4896978