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Sub-critical field domain reversal in epitaxial ferroelectric films.
- Source :
- Journal of Applied Physics; 2014, Vol. 116 Issue 12, p1-6, 6p, 1 Color Photograph, 4 Graphs
- Publication Year :
- 2014
-
Abstract
- Domain nucleation in epitaxial (001)-oriented Pb(Zr<subscript>0.2</subscript>TiO<subscript>0.8</subscript>)O<subscript>3</subscript> ultrathin ferroelectric films under a sub-critical field regime is investigated by means of piezoresponse force microscopy (PFM). Analytical fits to the domain radius and velocity as a function of time indicate that 180 domain nucleation and growth under a biased PFM tip exhibit a thermally activated, creep behavior. It is also found that an electric field of less than half of the local coercive (or critical) field E<subscript>c</subscript><superscript>loc</superscript> detected by PFM can create stable domains under prolonged bias application. Under these sub-critical bias conditions, it is the temporal evolution of the local electric-field profile due to the slow drift of screening charges or defects (e.g., ionic vacancies) that dictates domain nucleation and growth. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 98663168
- Full Text :
- https://doi.org/10.1063/1.4896730