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Sub-critical field domain reversal in epitaxial ferroelectric films.

Authors :
Chen, Jason
Gruverman, Alexei
Morozovska, Anna N.
Valanoor, Nagarajan
Source :
Journal of Applied Physics; 2014, Vol. 116 Issue 12, p1-6, 6p, 1 Color Photograph, 4 Graphs
Publication Year :
2014

Abstract

Domain nucleation in epitaxial (001)-oriented Pb(Zr<subscript>0.2</subscript>TiO<subscript>0.8</subscript>)O<subscript>3</subscript> ultrathin ferroelectric films under a sub-critical field regime is investigated by means of piezoresponse force microscopy (PFM). Analytical fits to the domain radius and velocity as a function of time indicate that 180 domain nucleation and growth under a biased PFM tip exhibit a thermally activated, creep behavior. It is also found that an electric field of less than half of the local coercive (or critical) field E<subscript>c</subscript><superscript>loc</superscript> detected by PFM can create stable domains under prolonged bias application. Under these sub-critical bias conditions, it is the temporal evolution of the local electric-field profile due to the slow drift of screening charges or defects (e.g., ionic vacancies) that dictates domain nucleation and growth. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
116
Issue :
12
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
98663168
Full Text :
https://doi.org/10.1063/1.4896730