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InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate.
- Source :
- IEEE Electron Device Letters; Oct2014, Vol. 35 Issue 10, p1010-1012, 3p
- Publication Year :
- 2014
-
Abstract
- We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a \(0.8 \times 6 \mu \) m \(^{2}\) DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 35
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 98573071
- Full Text :
- https://doi.org/10.1109/LED.2014.2347256