Reducing breakthrough dislocation toward Si/SiGe heterostructure to improve advanced HKMG SRAM device performance by optimizing fluorine co-implantation.

Details

Language :

English

ISBNs :

9781479936274

Database :

Complementary Index

Journal :

2014 International Workshop on Junction Technology (IWJT)

Publication Type :

Conference

Accession number :

98462778

Full Text :

https://doi.org/10.1109/IWJT.2014.6842052