Short-circuit robustness of SiC Power MOSFETs: Experimental analysis.

Details

Language :

English

ISBNs :

9781479929177

Database :

Complementary Index

Journal :

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Publication Type :

Conference

Accession number :

98443538

Full Text :

https://doi.org/10.1109/ISPSD.2014.6855978