Self-Aligned InP/InGaAs Single Heterojunction Bipolar Transistor with Novel Micro-airbridge Structure and Quasi-coplanar Contacts.

Details

Language :

English

ISSN :

0256307X

Volume :

20

Issue :

2

Database :

Complementary Index

Journal :

Chinese Physics Letters

Publication Type :

Academic Journal

Accession number :

98349268

Full Text :

https://doi.org/10.1088/0256-307X/20/2/342