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SiGe Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition.
- Source :
- Chinese Physics Letters; 9/1/1998, Vol. 15 Issue 9, p1-1, 1p
- Publication Year :
- 1998
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 15
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 98347833
- Full Text :
- https://doi.org/10.1088/0256-307X/15/9/024