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Heterostructure p-n junction tunnel diodes.
- Source :
- Applied Physics Letters; 9/10/1990, Vol. 57 Issue 11, p1140, 3p
- Publication Year :
- 1990
-
Abstract
- Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed. [ABSTRACT FROM AUTHOR]
- Subjects :
- HETEROSTRUCTURES
DIODES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 57
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9834699
- Full Text :
- https://doi.org/10.1063/1.103515