Regrowth of MBE-GaAs films on Si substrates by high energy ion-implantation and subsequent annealing.

Details

Language :

English

ISSN :

0256307X

Volume :

6

Issue :

10

Database :

Complementary Index

Journal :

Chinese Physics Letters

Publication Type :

Academic Journal

Accession number :

98346278

Full Text :

https://doi.org/10.1088/0256-307X/6/10/006