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Feature Profile Evolution During Etching of SiO2 in Radio-Frequency or Direct-Current Plasmas.
- Source :
- Plasma Science & Technology; Jan2012, Vol. 14 Issue 1, p1-1, 1p
- Publication Year :
- 2012
Details
- Language :
- English
- ISSN :
- 10090630
- Volume :
- 14
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Plasma Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 98316177
- Full Text :
- https://doi.org/10.1088/1009-0630/14/1/14