A Monte Carlo study of electron-hole scattering and steady-state minority-electron transport in GaAs.

We report the first bipolar Monte Carlo calculations of steady-state minority-electron transport in room-temperature p-GaAs including multiband electron-hole scattering with and without hole overlap factors. Our results show how such processes, which make a significant contribution to the minority-electron energy loss rate, can affect steady-state minority-electron transport. Furthermore, we discuss several other issues which we believe should be investigated before present Monte Carlo treatments of electron-hole scattering can provide quantitative information. [ABSTRACT FROM AUTHOR]