Parametric study of AlAs/GaAs superlattice double-barrier diodes.

Authors :: Paulus, M. J.
Bozada, C. A.
Huang, C. I.
Dudley, S. C.
Evans, K. R.
Stutz, C. E.
Jones, R. L.
Cheney, M. E.
Source :: Applied Physics Letters; 7/18/1988, Vol. 53 Issue 3, p207, 3p
Publication Year :: 1988
Abstract: Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed. [ABSTRACT FROM AUTHOR]