Cite
Electroreflectance of GaAs-AlGaAs modulation-doped field-effect transistors.
MLA
Höpfel, R. A., et al. “Electroreflectance of GaAs-AlGaAs Modulation-Doped Field-Effect Transistors.” Applied Physics Letters, vol. 47, no. 2, July 1985, p. 163. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=9817809&authtype=sso&custid=ns315887.
APA
Höpfel, R. A., Shah, J., Gossard, A. C., & Wiegmann, W. (1985). Electroreflectance of GaAs-AlGaAs modulation-doped field-effect transistors. Applied Physics Letters, 47(2), 163.
Chicago
Höpfel, R. A., J. Shah, A. C. Gossard, and W. Wiegmann. 1985. “Electroreflectance of GaAs-AlGaAs Modulation-Doped Field-Effect Transistors.” Applied Physics Letters 47 (2): 163. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=9817809&authtype=sso&custid=ns315887.