Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma.

Details

Language :

English

ISSN :

02681242

Volume :

14

Issue :

7

Database :

Complementary Index

Journal :

Semiconductor Science & Technology

Publication Type :

Academic Journal

Accession number :

98047027

Full Text :

https://doi.org/10.1088/0268-1242/14/7/304