Transport properties of a gated, double quantum well HEMT.

Details

Language :

English

ISSN :

02681242

Volume :

6

Issue :

7

Database :

Complementary Index

Journal :

Semiconductor Science & Technology

Publication Type :

Academic Journal

Accession number :

98045074

Full Text :

https://doi.org/10.1088/0268-1242/6/7/009