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Colloidal domain lithography in multilayers with perpendicular anisotropy: an experimental study and micromagnetic simulations.
- Source :
- Nanotechnology; 11/30/2012, Vol. 23 Issue 47, p1-1, 1p
- Publication Year :
- 2012
-
Abstract
- Currently, much attention is being paid to patterned multilayer systems in which there exists a perpendicular magnetic anisotropy, because of their potential applications in spintronics devices and in a new generation of magnetic storage media. To further improve their performance, different patterning techniques can be used, which render them suitable also for other applications. Here we show that He<superscript>+</superscript> 10 keV and Ar<superscript>+</superscript> 100 keV ion bombardment of (Ni<subscript>80</subscript>Fe<subscript>20</subscript>-2 nm/Au-2 nm/Co-0.6 nm/Au-2 nm)<subscript>10</subscript> multilayers through colloidal mask enables magnetic patterning of regularly arranged cylindrical magnetic domains, with perpendicular anisotropy, embedded in a non-ferromagnetic matrix or in a ferromagnetic matrix with magnetization oriented along the normal. These domains form an almost perfect two-dimensional hexagonal lattice with a submicron period and a large correlation length in a continuous and flat multilayer system. The magnetic anisotropy of these artificial domains remains unaffected by the magnetic patterning process, however the magnetization configuration of such a system depends on the magnetic properties of the matrix. The micromagnetic simulations were used to explain some of the features of the investigated patterned structures. [ABSTRACT FROM AUTHOR]
- Subjects :
- LITHOGRAPHY
MAGNETIC anisotropy
ION bombardment
MAGNETIZATION
SPINTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 23
- Issue :
- 47
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 98022793
- Full Text :
- https://doi.org/10.1088/0957-4484/23/47/475303