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2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT.
- Source :
- AIP Advances; 2014, Vol. 4 Issue 8, p087135-1-087135-7, 7p
- Publication Year :
- 2014
-
Abstract
- We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap located at E<subscript>c</subscript> - 0.25 eV in the absorption layer. Using the trap parameters, a dark current model is constructed and the device simulation generates the dark current characteristic which agrees well with the experimental data. The model suggests that the dark current at low reverse voltage is dominated by the Shockley-Read-Hall (SRH) and trap-assisted tunneling (TAT). Furthermore, it predicts some basic rules for suppressing the dark current in 2.6 μm InGaAs detectors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 4
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 97880091
- Full Text :
- https://doi.org/10.1063/1.4894142