Back to Search
Start Over
Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping.
- Source :
- Journal of Applied Physics; 2014, Vol. 116 Issue 8, p083710-1-083710-10, 10p, 2 Diagrams, 1 Chart, 6 Graphs
- Publication Year :
- 2014
-
Abstract
- Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn<subscript>1-x</subscript>Mn<subscript>x</subscript>Se with x<8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal-insulator transition. [ABSTRACT FROM AUTHOR]
- Subjects :
- MAGNETORESISTANCE
DILUTE magnetic materials
SEMICONDUCTORS
ELECTRONS
MAGNETIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 97850211
- Full Text :
- https://doi.org/10.1063/1.4894236