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Nano-artifact metrics based on random collapse of resist.
- Source :
- Scientific Reports; 8/22/2014, p1-5, 5p
- Publication Year :
- 2014
-
Abstract
- Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- Complementary Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 97804357
- Full Text :
- https://doi.org/10.1038/srep06142