Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of InAlN/AlN/GaN heterostructure field-effect transistors.

MLA

Luan, Chongbiao, et al. “Enhanced Effect of Side-Ohmic Contact Processing on the 2DEG Electron Density and Electron Mobility of InAlN/AlN/GaN Heterostructure Field-Effect Transistors.” Applied Physics A: Materials Science & Processing, vol. 116, no. 4, Sept. 2014, pp. 2065–75. EBSCOhost, https://doi.org/10.1007/s00339-014-8403-6.

APA

Luan, C., Lin, Z., Lv, Y., Feng, Z., Zhao, J., Yang, Q., & Yang, M. (2014). Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of InAlN/AlN/GaN heterostructure field-effect transistors. Applied Physics A: Materials Science & Processing, 116(4), 2065–2075. https://doi.org/10.1007/s00339-014-8403-6

Chicago

Luan, Chongbiao, Zhaojun Lin, Yuanjie Lv, Zhihong Feng, Jingtao Zhao, Qihao Yang, and Ming Yang. 2014. “Enhanced Effect of Side-Ohmic Contact Processing on the 2DEG Electron Density and Electron Mobility of InAlN/AlN/GaN Heterostructure Field-Effect Transistors.” Applied Physics A: Materials Science & Processing 116 (4): 2065–75. doi:10.1007/s00339-014-8403-6.