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Preparation and properties of transparent conductive N-doped CuAlO films using NO as the N source.
- Source :
- Journal of Materials Science: Materials in Electronics; Sep2014, Vol. 25 Issue 9, p4004-4007, 4p
- Publication Year :
- 2014
-
Abstract
- N-doped CuAlO films were prepared by RF magnetron sputtering on quartz substrates using NO as the N source. N concentration in the films is detected by Auger electron spectroscopy in detail, which confirms that N is indeed incorporated into the films. The optical and electrical properties of transparent conductive N-doped CuAlO films are modulated by the NO flow ratio in sputtering gas. The N-doped films have a visible transmittance of 60-70 % and a high infrared transmittance of ~85 %. The film deposited by using 15 % NO flow ratio with the optimal crystalline is provided with a conductivity of 3.75 × 10 S cm at room temperature, which improves over one order of magnitude compared with the undoped film. The enhanced conductive property is mainly originated from the ionization of acceptor impurities. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 25
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 97412446
- Full Text :
- https://doi.org/10.1007/s10854-014-2121-x