Fabrication of p- n junction diode using SnO/SnO thin films and its device characteristics.

Present study demonstrates the feasibility of using oxides of Sn to fabricate the p- n junction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO layers. The interface of the p- n junction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V. [ABSTRACT FROM AUTHOR]