Back to Search
Start Over
Simulation of the structure of GeAs4Te7 chalcogenide materials during memory switching1.
- Source :
- Canadian Journal of Physics; Jul2014, Vol. 92 Issue 7/8, p675-680, 6p, 3 Diagrams, 6 Graphs
- Publication Year :
- 2014
-
Abstract
- <i>Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
- Subjects :
- CHALCOGENIDES
CRYSTALS
INORGANIC compounds
ROCKS
ARSENIC
Subjects
Details
- Language :
- English
- ISSN :
- 00084204
- Volume :
- 92
- Issue :
- 7/8
- Database :
- Complementary Index
- Journal :
- Canadian Journal of Physics
- Publication Type :
- Academic Journal
- Accession number :
- 96984368
- Full Text :
- https://doi.org/10.1139/cjp-2013-0561