Separation of surface accumulation and bulk neutral channel in junctionless transistors.

The error rate of low-field mobility (μ₀) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (N_d) for a typical value of the first order mobility attenuation factor θ₀≈0.1V^-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ_{0_acc}) and the bulk neutral channel mobility (μ_bulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ_{0_acc} and μ_bulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform. [ABSTRACT FROM AUTHOR]