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Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability.
- Source :
- Applied Physics Letters; 6/23/2014, Vol. 104 Issue 25, p1-5, 5p, 1 Chart, 3 Graphs
- Publication Year :
- 2014
-
Abstract
- Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al<subscript>2</subscript>O<subscript>3</subscript>/ZrO<subscript>2</subscript> as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 96853859
- Full Text :
- https://doi.org/10.1063/1.4885362