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Magnetoresistance and Anomalous Hall Effect of InSb Doped with Mn.
- Source :
- Journal of Nano- & Electronic Physics; 2013, Vol. 5 Issue 4, p04015-1-04015-6, 6p
- Publication Year :
- 2013
-
Abstract
- Transport properties of polycrystalline (In, Mn)Sb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20776772
- Volume :
- 5
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Nano- & Electronic Physics
- Publication Type :
- Academic Journal
- Accession number :
- 96806011