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Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability.
- Source :
- IEEE Transactions on Nuclear Science; 6/10/2014 Part 2, Vol. 61 Issue 3, p1426-1432, 7p
- Publication Year :
- 2014
-
Abstract
- The total-dose radiation tolerance of 32-nm nFETs is investigated. nFETs built in 32-nm RF-CMOS-on-SOI technology with high-k dielectrics show increased off-state leakage current and electron trapping in the gate oxide. The impact of CMOS-on-SOI technology scaling (from 65-nm to 32-nm) on the total-dose radiation tolerance and hot-carrier reliability (HCR) is investigated through both experiments and supporting TCAD simulations. The 32-nm nFETs exhibit less total-dose degradation compared to 45-nm nFETs. However, the hot-carrier degradation increases as the technology scales. An interplay of electric-field in the gate oxide and impact ionization in the channel region is responsible for the observed differences in the degradation mechanisms for the three technologies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 61
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 96647352
- Full Text :
- https://doi.org/10.1109/TNS.2014.2320494