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Detailed understanding of the excitation-intensity dependent photoluminescence of ZnO materials: Role of defects.

Authors :
Prasada Rao, T.
Goswami, G. K.
Nanda, K. K.
Source :
Journal of Applied Physics; 2014, Vol. 115 Issue 21, p213513-1-213513-7, 7p, 2 Charts, 7 Graphs
Publication Year :
2014

Abstract

The photoluminescence (PL) of ZnO is shown to be dependent on the excitation intensity (EI) of the laser, and the substantial shift observed in the band to band transition is attributed to the heating effect. In order to understand this phenomenon in detail, we investigate the EI dependent PL of various ZnO samples systematically from liquid nitrogen (LN) to room temperature by varying the laser power. Some of the samples exhibit substantial red shift in the band to band transition with increasing EI even in LN environment, negligible effect is observed for others. Hence, our results strongly suggest that the EI dependent PL is not a characteristic of all ZnO samples. This indicates that laser-induced heating effect is not the dominant factor that governs the shifts in the PL spectra. Rather, the defect level excitation accounts for such observation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
115
Issue :
21
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
96410244
Full Text :
https://doi.org/10.1063/1.4881779