Physical properties and applications of InxGa1-xN nanowires.

Authors :: Segura-Ruiz, J.
Gómez-Gómez, M.
Garro, N.
Martínez-Criado, G.
Cantarero, A.
Denker, C.
Malindretos, J.
Rizzi, A.
Source :: AIP Conference Proceedings; 2014, Vol. 1598, p103-113, 11p, 2 Black and White Photographs, 3 Charts, 4 Graphs
Publication Year :: 2014
Abstract: We have successfully grown In<subscript>x</subscript>Ga<subscript>1-x</subscript>N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In<subscript>x</subscript>Ga<subscript>1-x</subscript>N is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result. [ABSTRACT FROM AUTHOR]