Back to Search
Start Over
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As , and sSi n-MOSFETs.
- Source :
- IEEE Transactions on Electron Devices; Jun2014, Vol. 61 Issue 6, p2027-2034, 8p
- Publication Year :
- 2014
-
Abstract
- Thanks to the high electron velocities, III–V semiconductors have the potential to meet the challenging ITRS requirements for high performance for sub-22-nm technology nodes and at a supply voltage approaching 0.5 V. This paper presents a comparative simulation study of ultrathin-body InAs, In0.53Ga0.47As , and strained Si MOSFETs, by using a comprehensive semiclassical multisubband Monte Carlo (MSMC) transport model. Our results show that: 1) due to the finite screening length in the source-drain regions, III–V and Si nanoscale MOSFETs with a given gate length (L{G}) may have a quite different effective channel length (Leff) ; 2) the difference in Leff provides a useful insight to interpret the performance comparison of III–V and Si MOSFETs; and 3) the engineering of the source-drain regions has a remarkable influence on the overall performance of nanoscale III–V MOSFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 96119682
- Full Text :
- https://doi.org/10.1109/TED.2014.2315919