Structure Defects in a Triple Semiconducting Compound ZnGeP.

In the investigations reported in this paper, focus is made on structure defects in a triple compoundsemiconductor ZnGeP. The effects of secondary-phase inclusions (ZnP) on optical material characteristics are demonstrated. The variation in the positions of dislocation chains and single dislocations in the bulk of ZnGeP is addressed. [ABSTRACT FROM AUTHOR]