Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials.

This study investigates the effect of the NH₃/N₂ ratio in plasma treatment on the physical and electrical properties as well as the reliability characteristics of porous low-k films. All of the plasma treatments resulted in the formation of a thin and modified layer on the surface of porous low-k films, and the properties of this modified layer were influenced by the NH₃/N₂ ratio in the plasma. Experimental results indicated that pure N₂ gas plasma treatment formed an amide-like/ nitride-like layer on the surface, which apparently leads to a higher increase in the dielectric constant. Plasma treatment with a mixture of NH₃/N₂ gas induced more moisture uptake on the surface of the low-k dielectric, degrading the electrical performance and reliability. Among all plasma treatment with NH₃/N₂ mixed gas, that with pure NH₃ gas yielded low-k dielectrics with the worse electrical and reliability characteristics. [ABSTRACT FROM AUTHOR]