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Temperature dependent Raman scattering studies of three dimensional topological insulators Bi2Se3.

Authors :
Irfan, Bushra
Sahoo, Satyaprakash
Gaur, Anand P. S.
Ahmadi, Majid
Guinel, Maxime J.-F.
Katiyar, Ram S.
Chatterjee, Ratnamala
Source :
Journal of Applied Physics; 2014, Vol. 115 Issue 17, p173506-1-173506-6, 6p
Publication Year :
2014

Abstract

We investigate the temperature dependent (83K ⩽ T ⩽ 523K) frequency shift of 2A<superscript>1</superscript><subscript>g</subscript> and 1E<superscript>2</superscript><subscript>g</subscript> phonon modes in the three dimensional topological insulator Bi<subscript>2</subscript>Se<subscript>3</subscript>, using Raman spectroscopy. The high quality single crystals of Bi<subscript>2</subscript>Se<subscript>3</subscript> were grown using a modified Bridgman technique and characterized by Laue diffraction and high resolution transmission electron microscopy. A significant broadening in the line shape and red-shift in the frequencies were observed with increase in temperature. Polarized Raman scattering measurement shows a strong polarization effect of A<superscript>1</superscript><subscript>g</subscript> and A<superscript>2</superscript><subscript>g</subscript> phonon modes which confirms the good quality single crystals of Bi<subscript>2</subscript>Se<subscript>3</subscript>. Temperature co-efficient for A<superscript>1</superscript><subscript>1g</subscript>; E<superscript>2</superscript><subscript>g</subscript> , and A<superscript>2</superscript><subscript>1g</subscript> modes was estimated to be -1.44 × 10<superscript>-2</superscript>, -1.94 ×10<superscript>-2</superscript>, and -1.95 ×10<superscript>-2 </superscript> cm<superscript>-1</superscript>/K, respectively. Our results shed light on anharmonic properties of Bi<subscript>2</subscript>Se<subscript>3</subscript>. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
115
Issue :
17
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
95982932
Full Text :
https://doi.org/10.1063/1.4871860