Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors.

The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, the maximum transconductance, the subthreshold slope, the drain-induced barrier lowering (DIBL), and the $I_{{\rm ON}}/I_{{\rm OFF}}$ ratio are the key parameters under analysis. It has been shown that the negative back bias can reduce the short-channel effects occurrence, improving the $I_{{\rm ON}}/I_{{\rm OFF}}$ ratio and DIBL. [ABSTRACT FROM PUBLISHER]