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Memristor: Part II–DC, Transient, and RF Analysis.
- Source :
- IEEE Transactions on Electron Devices; Apr2014, Vol. 61 Issue 4, p1062-1070, 9p
- Publication Year :
- 2014
-
Abstract
- The dc and RF circuit performance of memristor circuits, including transient behavior, is developed by considering current contributions arising from different conduction mechanisms, namely, filament-assisted and bulk tunneling currents and currents flowing through low and high conductivity filaments. The dc circuit model explains the observed I-V hysteresis and most importantly allows scaling and optimization. A transient circuit model of memristive system is developed, based upon the dynamics, incorporating underlying electrochemistry that suggests SET and RESET transitions for a 50-nm TiO2-based memristor take approximately 120 ps to stabilize. A faster READ/WRITE operation would require appropriate conditioning circuitry. RF analysis suggests for a maximum allowable frequency of 7.5 GHz beyond which memristors can no longer be used as RRAM. These values can be pushed to higher limits by increasing the device cross-sectional area or choosing lower permittivity materials. The developed model allows its incorporation in commercial circuit simulators. The derived model is validated by incorporating it in Chua's chaotic circuit. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 95069176
- Full Text :
- https://doi.org/10.1109/TED.2014.2304639