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Giant dielectric constant in TiO2/Al2O3 nanolaminates grown on doped silicon substrate by pulsed laser deposition.

Authors :
Walke, P.
Bouregba, R.
Lefevre, A.
Parat, G.
Lallemand, F.
Voiron, F.
Mercey, B.
Lüders, U.
Source :
Journal of Applied Physics; 2014, Vol. 115 Issue 9, p094103-1-094103-5, 5p, 1 Diagram, 3 Graphs
Publication Year :
2014

Abstract

High quality amorphous nanolaminates by means of alternate Al<subscript>2</subscript>O<subscript>3</subscript> and TiO<subscript>2</subscript> oxide sublayers were grown with atomic scale thickness control by pulsed laser deposition. A giant dielectric constant (>10 000), strongly enhanced compared to the value of either Al<subscript>2</subscript>O<subscript>3</subscript> or TiO<subscript>2</subscript> or their solid solution, was observed. The dependence of the dielectric constant and the dielectric loss on the individual layer thickness of each of the constituting materials was investigated between 0.3 nm and 1 nm, in order to understand the prevailing mechanisms and allow for an optimization of the performances. An impedance study confirmed as the key source of the giant dielectric constant a Maxwell-Wagner type dielectric relaxation, caused by space charge polarization in the nanolaminate structure. The current work provides better insight of nanolaminates and their sublayer thickness engineering for potential applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
115
Issue :
9
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
94853788
Full Text :
https://doi.org/10.1063/1.4867780