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Technology downscaling worsening radiation effects in bulk: SOI to the rescue.

Authors :
Roche, Philippe
Autran, Jean-Luc
Gasiot, Gilles
Munteanu, Daniela
Source :
2013 IEEE International Electron Devices Meeting; 2013, p31.1.1-31.1.4, 0p
Publication Year :
2013

Abstract

Atmospheric radiation is today as important to IC reliability as intrinsic failure modes. In non-critical consumer applications (cell phone, printer, gaming), a relatively high soft error rate (SER) is often tolerable. In contrast, a similar failure rate would be deemed unacceptably high in an arena where system reliability, accessibility, and serviceability are of paramount importance (networking, server, avionic, space), particularly where human life or safety is at risk (medical, automotive, transportation). Increasing number of industry segments are impacted due to growing amount of memory and logic components per circuit. Concurrently, sub-45nm downscaling has a profound impact on SER of bulk CMOS technologies. The enhanced resilience of latest SOI technologies helps to leverage existing robust design solutions. In this paper, experimental radiation test results and simulations are reported for the first time in UTBB FDSOI 28nm and compared to Bulk, PDSOI and FinFET alternatives. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISBNs :
9781479923069
Database :
Complementary Index
Journal :
2013 IEEE International Electron Devices Meeting
Publication Type :
Conference
Accession number :
94564445
Full Text :
https://doi.org/10.1109/IEDM.2013.6724728