Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs.

MLA

Sasaki, Y., et al. “Improved Sidewall Doping of Extensions by AsH3 Ion Assisted Deposition and Doping (IADD) with Small Implant Angle for Scaled NMOS Si Bulk FinFETs.” 2013 IEEE International Electron Devices Meeting, Jan. 2013, p. 20.6.1-20.6.4. EBSCOhost, https://doi.org/10.1109/IEDM.2013.6724671.

APA

Sasaki, Y., Godet, L., Chiarella, T., Brunco, D. P., Rockwell, T., Lee, J. W., Colombeau, B., Togo, M., Chew, S. A., Zschaetszch, G., Noh, K. B., De Keersgieter, A., Boccardi, G., Kim, M. S., Hellings, G., Martin, P., Vandervorst, W., Thean, A., & Horiguchi, N. (2013). Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs. 2013 IEEE International Electron Devices Meeting, 20.6.1-20.6.4. https://doi.org/10.1109/IEDM.2013.6724671

Chicago

Sasaki, Y., L. Godet, T. Chiarella, D. P. Brunco, T. Rockwell, J. W. Lee, B. Colombeau, et al. 2013. “Improved Sidewall Doping of Extensions by AsH3 Ion Assisted Deposition and Doping (IADD) with Small Implant Angle for Scaled NMOS Si Bulk FinFETs.” 2013 IEEE International Electron Devices Meeting, January, 20.6.1-20.6.4. doi:10.1109/IEDM.2013.6724671.