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Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si.

Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si.

Authors :
Chen, Renyu
Trzynadlowski, Bart
Dunham, Scott T.
Source :
Journal of Applied Physics; 2014, Vol. 115 Issue 5, p1-6, 6p
Publication Year :
2014

Abstract

In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P<subscript>4</subscript>V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P<subscript>1</subscript>V or metal - P<subscript>2</subscript>V as the gettered species, the binding of metals to P<subscript>4</subscript>V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
115
Issue :
5
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
94483071
Full Text :
https://doi.org/10.1063/1.4864377