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Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si.
Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si.
- Source :
- Journal of Applied Physics; 2014, Vol. 115 Issue 5, p1-6, 6p
- Publication Year :
- 2014
-
Abstract
- In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P<subscript>4</subscript>V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P<subscript>1</subscript>V or metal - P<subscript>2</subscript>V as the gettered species, the binding of metals to P<subscript>4</subscript>V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations. [ABSTRACT FROM AUTHOR]
- Subjects :
- GETTERING
SILICON research
PHOSPHORUS
TRANSITION metals
ATOMIC structure
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 115
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 94483071
- Full Text :
- https://doi.org/10.1063/1.4864377