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High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure.
- Source :
- Applied Physics Letters; 2/3/2014, Vol. 104 Issue 5, p053103-1-053103-4, 4p, 1 Diagram, 3 Graphs
- Publication Year :
- 2014
-
Abstract
- A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12V<superscript>-1</superscript>, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 94376788
- Full Text :
- https://doi.org/10.1063/1.4863840