The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD.

Details

Language :

English

ISSN :

16744926

Volume :

34

Issue :

11

Database :

Complementary Index

Journal :

Journal of Semiconductors

Publication Type :

Academic Journal

Accession number :

94292874

Full Text :

https://doi.org/10.1088/1674-4926/34/11/113002