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Influence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties.
- Source :
- Journal of Physics D: Applied Physics; 9/25/2013, Vol. 46 Issue 38, p385301-385310, 10p
- Publication Year :
- 2013
-
Abstract
- In this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al<subscript>2</subscript>O<subscript>3</subscript>)/Al<subscript>2</subscript>O<subscript>3</subscript> multi-layer films with layer thicknesses in the range of a few nanometres. The films were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (∼3 to 5 nm) embedded between ultra-thin (∼6 nm thickness) Al<subscript>2</subscript>O<subscript>3</subscript> layers. Our results show that the structural and compositional properties of the films can be tuned by changing the RF-power. It is found that nearly spherical and well confined isolated SiGe NCs (∼5 nm) are obtained for an RF-power value of 80 W. The PL properties of the films were studied and optical emission in the blue visible wavelength region was observed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 46
- Issue :
- 38
- Database :
- Complementary Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 94287307
- Full Text :
- https://doi.org/10.1088/0022-3727/46/38/385301