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Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon.
- Source :
- Applied Physics Letters; 1/27/2014, Vol. 104 Issue 4, p042111-1-042111-4, 4p, 5 Graphs
- Publication Year :
- 2014
-
Abstract
- Rapid thermal annealing in a belt furnace results in a dramatic change of the recombination properties of boron-doped Czochralski silicon: (1) the lifetime degraded by applying a prolonged illumination at room temperature was significantly improved, (2) after subsequent dark recovery, the lifetime has a remarkably high value, and (3) the permanent recovery, by annealing at 185°C under illumination, is enormously accelerated, and the finally achieved stable lifetime acquires a record value of 1.5 ms, as compared to 110 μs after permanent recovery of not-annealed reference samples [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 94247499
- Full Text :
- https://doi.org/10.1063/1.4863674