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Foreword Special Issue on Compact Modeling of Emerging Devices.
- Source :
- IEEE Transactions on Electron Devices; Feb2014, Vol. 61 Issue 2, p221-224, 4p
- Publication Year :
- 2014
-
Abstract
- An introduction is presented in which the editor discusses various articles within the issue on topics including research and development in compact models, metal oxide semiconductor field-effect transistors (MOSFET) modeling and RF Compact Model for Bulk MOSFET.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 94016465
- Full Text :
- https://doi.org/10.1109/TED.2013.2295931