Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering.

MLA

Merckling, C., et al. “Heteroepitaxy of InP on Si(001) by Selective-Area Metal Organic Vapor-Phase Epitaxy in Sub-50 Nm Width Trenches: The Role of the Nucleation Layer and the Recess Engineering.” Journal of Applied Physics, vol. 115, no. 2, Jan. 2014, pp. 1–6. EBSCOhost, https://doi.org/10.1063/1.4862044.

APA

Merckling, C., Waldron, N., S. Jiang, W. Guo, Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Heyns, M., & Vandervorst, W. (2014). Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering. Journal of Applied Physics, 115(2), 1–6. https://doi.org/10.1063/1.4862044

Chicago

Merckling, C., N. Waldron, S. Jiang, W. Guo, N. Collaert, M. Caymax, E. Vancoille, et al. 2014. “Heteroepitaxy of InP on Si(001) by Selective-Area Metal Organic Vapor-Phase Epitaxy in Sub-50 Nm Width Trenches: The Role of the Nucleation Layer and the Recess Engineering.” Journal of Applied Physics 115 (2): 1–6. doi:10.1063/1.4862044.