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Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction.
- Source :
- Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May2009, Vol. 27 Issue 3, p1784-1788, 5p, 2 Color Photographs, 2 Black and White Photographs, 5 Graphs
- Publication Year :
- 2009
-
Abstract
- Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10711023
- Volume :
- 27
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
- Publication Type :
- Academic Journal
- Accession number :
- 93602869
- Full Text :
- https://doi.org/10.1116/1.3116590