O2/HMDSO-Plasma-Deposited Organic-Inorganic Hybrid Film for Gate Dielectric of MgZnO Thin-Film Transistor.

An organic-inorganic hybrid film is deposited from O₂/HMDSO plasma. The SiOSi/SiCH₃ FTIR absorption ratio of this film increases with the process power and O₂/HMDSO precursor flow ratio, resulting in a more inorganic-like film. This hybrid film is used as the gate dielectric of MgZnO TFTs. As the SiOSi/SiCH₃ FTIR absorption ratio of the gate dielectric increases, the gate leakage current decreases, on/off current ratio increases, threshold voltage increases, and subthreshold swing increases. High SiCH₃ bonding content in the gate dielectric improves TFT switching but deteriorates gate insulation, resulting in increased gate leakage current and decreased on/off current ratio. [ABSTRACT FROM AUTHOR]