Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation.

MLA

Jagannathan, S., et al. “Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation.” IEEE Transactions on Nuclear Science, vol. 60, no. 6, Dec. 2013, pp. 4498–504. EBSCOhost, https://doi.org/10.1109/TNS.2013.2283457.

APA

Jagannathan, S., Loveless, T. D., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Haeffner, T. D., Kauppila, J. S., Mahatme, N., Bhuva, B. L., Alles, M. L., Holman, W. T., Witulski, A. F., & Massengill, L. W. (2013). Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation. IEEE Transactions on Nuclear Science, 60(6), 4498–4504. https://doi.org/10.1109/TNS.2013.2283457

Chicago

Jagannathan, S., T. D. Loveless, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, T. D. Haeffner, J. S. Kauppila, et al. 2013. “Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation.” IEEE Transactions on Nuclear Science 60 (6): 4498–4504. doi:10.1109/TNS.2013.2283457.